f20;BACKGROUND-COLOR:#4ae2f7">28 F O U N D R Y L E A D E R S H I P F O R T H E S o C G E N E R A T I O N www.umc.com f20;BACKGROUND-COLOR:#4ae2f7">28 Nanometer UMC's f20;BACKGROUND-COLOR:#4ae2f7">28nm process technology is developed for applications that require the highest performance with the lowest power leakage. In October 2008, we were the first foundry to deliver fully functional f20;BACKGROUND-COLOR:#4ae2f7">28nm SRAM chips and have proven in silicon the high-K/metal gate technology used for this technology node. Our f20;BACKGROUND-COLOR:#4ae2f7">28nm platform is based on industry mainstream technology that includes conventional poly/oxynitride process and gate last, high-K metal gate, which provides superior performance over gate first high-k offerings. Currently, our f20;BACKGROUND-COLOR:#4ae2f7">28nm is in volume production for several customer products. f20;BACKGROUND-COLOR:#4ae2f7">28 Nanometer - Customer-Driven Foundry Solutions Advanced Technology Roadmap 2015 Lf20;BACKGROUND-COLOR:#4ae2f7">28HPM HKMG 0.9V 1.8/2.5V Lf20;BACKGROUND-COLOR:#4ae2f7">28LP POLY/SiON 1.05V 1.8/2.5V 20nm SoC 0.9V 1.8 FinFET HKMG 0.8V 1.8V High Performance Low Power Lf20;BACKGROUND-COLOR:#4ae2f7">28HLP POLY/SiON 1.05V 1.8/2.5V f20;BACKGROUND-COLOR:#4ae2f7">28nm Technology for Broad Applications UMC incorporates multiple approaches for its f20;BACKGROUND-COLOR:#4ae2f7">28nm technology to address different market applications.The first option is conventional poly-SiON technology used for our Low Power (LP) and High-Performance Low Power (HLP) processes. The LP process follows industry standards to satisfy customers' multiple foundry strategy. The HLP process delivers a 20%* performance enhancement over the LP platform due to process optimization techniques. These platforms are ideal for portable applications and consumer electronics such as mobile phones, wireless ICs and TVs. For applications that require further reduction of EOT (equivalent oxide thickness) to increase performance but still maintain low power consumption,a second,High-K/Metal Gate (HK/MG) option is offered on a High Performance for Mobile (HPM) platform.The HPM process is ideal for speed-intensive and power consumption optimization products such as digital TV applications, portable processors and high speed networking. UMC'sf20;BACKGROUND-COLOR:#4ae2f7">28-nanometersolutionfeaturesaflexible technologydesignplatform.Customerscanchoose theprocessdeviceoptions optimized for their specific application, such as HPM, LP and HLP transistors with their multiple Vt options. Platform Offering HLP LP HPM Core Vcc (V) 1.05 1.05 0.9 Vt Options Ultra -Low ? Low ? ? ? Regular ? ? ? High ? ? ? Ultra - High ? 1.8V IO 1.8V UD 1.5V ?* ? ? 1.8V ?* ? ? 2.5V IO 2.5V UD 1.8V ? ?* ?* 2.5V ? ?* ?* 2.5V OD 3.3V ? ?* ?* SRAM SP ? ? ? DP ? ? ? Mixed Signal Devices Native Vt / Bipolar / Diodes / MOM Cap. / NCAP / Resistor f20;BACKGROUND-COLOR:#4ae2f7">28nm Device Solutions Tox_inv (A) Lf20;BACKGROUND-COLOR:#4ae2f7">28_HPM GOI Spec. Jg_inv (A/cm 2 ) HK/MG gate-stack Poly/SiON gate-stack * Optional IO Offering Lf20;BACKGROUND-COLOR:#4ae2f7">28 Device Offering HK/MG Technology Benefits f20;BACKGROUND-COLOR:#4ae2f7">28nm Platform Cost vs. Performance HKMG POLY/SiON f20;BACKGROUND-COLOR:#4ae2f7">28HPM f20;BACKGROUND-COLOR:#4ae2f7">28LP f20;BACKGROUND-COLOR:#4ae2f7">28HLP Cost Performa nce * Based on UMC's internal benchmarking. Actual customer product performance results will vary. www.umc.com F O U N D R Y L E A D E R S H I P F O R T H E S o C G E N E R A T I O N For more information: visit www.umc.com or e-mail sales@umc.com North America: UMC USA 488 De Guigne Drive, Sunnyvale, CA 94085, USA Tel: 1-408-523-7800 Fax: 1-408-733-8090 Asia: UMC No. 3, Li-Hsin 2nd Road, Hsinchu Science Park, Hsinchu, Taiwan Tel: 886-3-578-2258 Fax: 886-3-577-9392 Europe: UMC Europe BV De entree 77 1101 BH Amsterdam Zuidoost The Netherlands Tel: 31-(0)20-5640950 Fax: 31-(0)20-6977826 Japan: UMC Japan 15F Akihabara Centerplace Bldg., 1 Kanda Aioi-Cho Chiyoda-Ku Tokyo 101-0029 Japan Tel : +81-3-5294-2701 Fax: +81-3-5294-2707 Singapore: UMC-SG No. 3, Pasir Ris Drive 12, Singapore 5195f20;BACKGROUND-COLOR:#4ae2f7">28 Tel: +65-6213-0018 Fax: +65-6213-0008 Korea: UMC Korea Tel: 886-975615049 (TWN) Fax: 886-3-5784308 (TWN) 1209
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f20;BACKGROUND-COLOR:#4ae2f7">28 F O U N D R Y L E A D E R S H I P F O R T H E S o C G E N E R A T I O N www.umc.com f20;BACKGROUND-COLOR:#4ae2f7">28 Nanometer UMC's f20;BACKGROUND-COLOR:#4ae2f7">28nm process technology is developed for applications that require the highest performance with the lowest power leakage. In October 2008, we were the first foundry to deliver fully functional f20;BACKGROUND-COLOR:#4ae2f7">28nm SRAM chips and have proven in silicon the high-K/metal gate technology used for this technology node. Our f20;BACKGROUND-COLOR:#4ae2f7">28nm platform is based on industry mainstream technology that includes conventional poly/oxynitride process and gate last, high-K metal gate, which provides superior performance over gate first high-k offerings. Currently, our f20;BACKGROUND-COLOR:#4ae2f7">28nm is in volume production for several customer products. f20;BACKGROUND-COLOR:#4ae2f7">28 Nanometer - Customer-Driven Foundry Solutions Advanced Technology Roadmap 2015 Lf20;BACKGROUND-COLOR:#4ae2f7">28HPM HKMG 0.9V 1.8/2.5V Lf20;BACKGROUND-COLOR:#4ae2f7">28LP POLY/SiON 1.05V 1.8/2.5V 20nm SoC 0.9V 1.8 FinFET HKMG 0.8V 1.8V High Performance Low Power Lf20;BACKGROUND-COLOR:#4ae2f7">28HLP POLY/SiON 1.05V 1.8/2.5V f20;BACKGROUND-COLOR:#4ae2f7">28nm Technology for Broad Applications UMC incorporates multiple approaches for its f20;BACKGROUND-COLOR:#4ae2f7">28nm technology to address different market applications.The first option is conventional poly-SiON technology used for our Low Power (LP) and High-Performance Low Power (HLP) processes. The LP process follows industry standards to satisfy customers' multiple foundry strategy. The HLP process delivers a 20%* performance enhancement over the LP platform due to process optimization techniques. These platforms are ideal for portable applications and consumer electronics such as mobile phones, wireless ICs and TVs. For applications that require further reduction of EOT (equivalent oxide thickness) to increase performance but still maintain low power consumption,a second,High-K/Metal Gate (HK/MG) option is offered on a High Performance for Mobile (HPM) platform.The HPM process is ideal for speed-intensive and power consumption optimization products such as digital TV applications, portable processors and high speed networking. UMC'sf20;BACKGROUND-COLOR:#4ae2f7">28-nanometersolutionfeaturesaflexible technologydesignplatform.Customerscanchoose theprocessdeviceoptions optimized for their specific application, such as HPM, LP and HLP transistors with their multiple Vt options. Platform Offering HLP LP HPM Core Vcc (V) 1.05 1.05 0.9 Vt Options Ultra -Low ? Low ? ? ? Regular ? ? ? High ? ? ? Ultra - High ? 1.8V IO 1.8V UD 1.5V ?* ? ? 1.8V ?* ? ? 2.5V IO 2.5V UD 1.8V ? ?* ?* 2.5V ? ?* ?* 2.5V OD 3.3V ? ?* ?* SRAM SP ? ? ? DP ? ? ? Mixed Signal Devices Native Vt / Bipolar / Diodes / MOM Cap. / NCAP / Resistor f20;BACKGROUND-COLOR:#4ae2f7">28nm Device Solutions Tox_inv (A) Lf20;BACKGROUND-COLOR:#4ae2f7">28_HPM GOI Spec. Jg_inv (A/cm 2 ) HK/MG gate-stack Poly/SiON gate-stack * Optional IO Offering Lf20;BACKGROUND-COLOR:#4ae2f7">28 Device Offering HK/MG Technology Benefits f20;BACKGROUND-COLOR:#4ae2f7">28nm Platform Cost vs. Performance HKMG POLY/SiON f20;BACKGROUND-COLOR:#4ae2f7">28HPM f20;BACKGROUND-COLOR:#4ae2f7">28LP f20;BACKGROUND-COLOR:#4ae2f7">28HLP Cost Performa nce * Based on UMC's internal benchmarking. Actual customer product performance results will vary. www.umc.com F O U N D R Y L E A D E R S H I P F O R T H E S o C G E N E R A T I O N For more information: visit www.umc.com or e-mail sales@umc.com North America: UMC USA 488 De Guigne Drive, Sunnyvale, CA 94085, USA Tel: 1-408-523-7800 Fax: 1-408-733-8090 Asia: UMC No. 3, Li-Hsin 2nd Road, Hsinchu Science Park, Hsinchu, Taiwan Tel: 886-3-578-2258 Fax: 886-3-577-9392 Europe: UMC Europe BV De entree 77 1101 BH Amsterdam Zuidoost The Netherlands Tel: 31-(0)20-5640950 Fax: 31-(0)20-6977826 Japan: UMC Japan 15F Akihabara Centerplace Bldg., 1 Kanda Aioi-Cho Chiyoda-Ku Tokyo 101-0029 Japan Tel : +81-3-5294-2701 Fax: +81-3-5294-2707 Singapore: UMC-SG No. 3, Pasir Ris Drive 12, Singapore 5195f20;BACKGROUND-COLOR:#4ae2f7">28 Tel: +65-6213-0018 Fax: +65-6213-0008 Korea: UMC Korea Tel: 886-975615049 (TWN) Fax: 886-3-5784308 (TWN) 1209