10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y flow3xPHASE-SiC 1200V / 80m? Solar Inverter Charger Power Supply 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj=25°C, unless otherwise specified Parameter Symbol Value Unit T1, T2, T3, T4, T5, T6 VDS 1200 V Tjmax 150 °C D1, D2, D3, D4, D5, D6 50 Th=80°C 10 23 tp=8,3ms Tj=Tjmax A °C W 31 tp limited by Tjmax 1200 Tj=25°C 25 175 Th=80°C Tj=Tjmax Repetitive Peak Forward Surge Current Tjmax VRRM Ptot IFSM IFRM A A W Th=80°C ID Th=80°C 19 Tj=Tjmax Tj=Tjmax tp limited by Tjmax Features flow 0 12mm housing Target Applications Condition Types Maximum Ratings Schematic SiC-Power MOSFET?s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) V -6/+22 Maximum Junction Temperature VGS Power dissipation Gate-source peak voltage Ptot Ultra Low Inductance with integrated DC-capacitors Switching frequency >100kHz A V A 80 Pulsed drain current Maximum Junction Temperature Non-Repetitive Peak Forward Surge Current Peak Repetitive Reverse Voltage Forward average current Power dissipation per Diode IFAV Temperature sensor Drain to source breakdown voltage DC drain current IDpulse copyright Vincotech 1 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Condition Maximum Ratings C1, C2, C3 Thermal Properties Insulation Properties t=2s DC voltage 4000 V min 12,7 mm min 9,9 mm °C Storage temperature Tstg -40…+125 °C Max.DC voltage 1000 Clearance Insulation voltage Creepage distance Top Operation temperature under switching condition -40…+(Tjmax - 25) VMAX Tc=25°C V copyright Vincotech 2 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max T1, T2, T3, T4, T5, T6 Tj=25°C 70,00 Tj=125°C 115,00 Tj=25°C 1,6 4 Tj=125°C Tj=25°C 100 Tj=125°C Tj=25°C 10 Tj=125°C Tj=25°C 0,8 1,40 1,7 Tj=125°C 1,73 Tj=25°C 100 Tj=125°C Thermal resistance chip to heatsink per chip RthJH Phase-Change Material 3,07 K/W Tj=25°C 14 Tj=125°C 13 Tj=25°C 7 Tj=125°C 7 Tj=25°C 96 Tj=125°C 106 Tj=25°C 5 Tj=125°C 5 Tj=25°C 0,333 Tj=125°C 0,244 Tj=25°C 0,190 Tj=125°C 0,178 Tj=25°C 9 Tj=125°C 10 Tj=25°C 10 Tj=125°C 10 Tj=25°C 0,080 Tj=125°C 0,110 Tj=25°C 0,025 Tj=125°C 0,042 di(rec)max Tj=25°C 1960 /dt Tj=125°C 2220 ? 9 Zero Gate Voltage Drain Current Idss Internal Gate Resistance RG f=1MHz; open Drain ?A 1200 0 A/?s 16 Qrr trr IRRM Erec Rgon=1 ? Reverse recovered energy Peak rate of fall of recovery current D1, D2, D3, D4, D5, D6 td(ON) T1, T2, T3, T4, T5, T6 Turn-on energy loss per pulse Eon Eoff Characteristic Values Value Conditions V(GS)th 16 700 16 Rgon=1 ? tr td(OFF) Fall time Turn-off energy loss per pulse Turn off delay time tf Rgoff=1 ? Rise Time Turn On Delay Time Peak recovery current Reverse recovery time Reverse recovery charge 700 16 mWs A ns ?C ns mWs 106 31 nC pF nA Gate to Source Leakage Current Igss -6/22 m? Gate threshold voltage V 0,0044 Static drain to source ON resistance RDS(on) 20 VDS = VGS 20 Total gate charge Qg 18 400 10 Tj=25°C f=1MHz 0 Reverse transfer capacitance Gate to drain charge Qgd Crss Output capacitance Coss Input capacitance Ciss Thermal resistance chip to heatsink per chip RthJH Phase-Change Material Gate to source charge Qgs 27 77 800 2080 16 K/W 1200 1,41 V 5 D1, D2, D3, D4, D5, D6 Forward voltage VF Irm Single ended configuration Reverse leakage current ?A copyright Vincotech 3 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Characteristic Values Value Conditions Tj=25°C 13 Tj=125°C 16 Tj=25°C 18 Tj=125°C 17 Tj=25°C 0,220 Tj=125°C 0,300 di(rec)max Tj=25°C 3080 /dt Tj=125°C 3572 Tj=25°C 0,067 Tj=125°C 0,119 Tj=25°C 17 Tj=125°C 16 Tj=25°C 6 Tj=125°C 5 Tj=25°C 75 Tj=125°C 79 Tj=25°C 30 Tj=125°C 74 Tj=25°C 0,330 Tj=125°C 0,f20;BACKGROUND-COLOR:#4ae2f7">280 Tj=25°C 0,080 Tj=125°C 0,080 Tj=25°C 16 Tj=125°C 16 Tj=25°C 6 Tj=125°C 6 Tj=25°C 71 Tj=125°C 75 Tj=25°C 12 Tj=125°C 10 Tj=25°C 0,310 Tj=125°C 0,220 Tj=25°C 0,110 Tj=125°C 0,090 Tj=25°C 10 Tj=125°C 12 Tj=25°C 47 Tj=125°C 47 Tj=25°C 0,2 Tj=125°C 0,2 di(rec)max Tj=25°C 1373 /dt Tj=125°C 1302 Tj=25°C 0,05 Tj=125°C 0,06 -6/16 Rgon=1 ? ns mWs ns 47 16 Rgoff=1 ? Rgon=1 ? tr td(OFF) Qrr trr Erec IRRM Rise time T1, T2, T3, T4, T5, T6 Turn-on delay time tf Eoff tr td(on) Eon td(off) Turn-off energy loss per pulse Reverse recovery time Turn-off delay time Peak reverse recovery current D1, D2, D3, D4, D5, D6 Turn-on energy loss per pulse Fall time Turn On Delay Time Turn off delay time Turn-off energy loss per pulse Fall time Turn-on energy loss per pulse Eoff Eon tf td(ON) 700 16 T1, T2, T3, T4, T5, T6 Reverse recovered charge Rise Time Reverse recovered energy Peak rate of fall of recovery current 22000 T=25°C 5 -5 2 ? mWs ?C A/?s ns A nF Rgon=1 ? T=25°C T=25°C T=25°C Thermistor R100=1486 ? ?R/R Power dissipation constant Rated resistance R 700 -6/16 C Reverse recovery energy Reverse recovered charge C1, C2, C3 C value Erec Peak rate of fall of recovery current Qrr Peak reverse recovery current -6/16 D1, D2, D3, D4, D5, D6 Rgon=1 ? Rgoff=1 ? 16 700 -6/16 ns A ?C mWs A/?s mWs B-value B(25/50) Tol. ±3% trr Deviation of R100 Power dissipation P IRRM B-value B(25/100) Tol. ±3% Vincotech NTC Reference Reverse recovery time 700 K mW/K % mW K Splitted output configuration T=25°C 3996 B 16 T=25°C 3950 200 Half bridge configuration copyright Vincotech 4 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 3 D1, D2, D3, D4, D5, D6 FWD Figure 4 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(Ic) Erec = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Half Bridge Configuration Eon High T Eoff High T Eon Low T Eoff Low T 0 0,3 0,6 0,9 1,2 1,5 0 5 10 15 20 25 30 I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,3 0,6 0,9 1,2 1,5 0 4 8 12 16 20 R G ( ?) E (mWs) Erec High T Erec Low T 0,00 0,04 0,08 0,12 0,16 0,20 0 5 10 15 20 25 30 I C (A) E (mWs) Erec High T Erec Low T 0,00 0,04 0,08 0,12 0,16 0,20 0 4 8 12 16 20 R G ( ?) E (mWs) copyright Vincotech 5 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(IC) t = f(RG) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 7 D1, D2, D3, D4, D5, D6 FWD Figure 8 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of MOSFET turn on gate resistor trr = f(Ic) trr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Half Bridge Configuration tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 5 10 15 20 25 30 I C (A) t (ms) trr High T trr Low T 0 0,03 0,06 0,09 0,12 0,15 0 4 8 12 16 20 R gon ( ?) t rr (ms) tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 4 8 12 16 20 R G ( ?) t (ms) trr High T trr Low T 0 0,005 0,01 0,015 0,02 0,025 0,03 0 5 10 15 20 25 30 I C (A) t rr (ms) copyright Vincotech 6 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 9 D1, D2, D3, D4, D5, D6 FWD Figure 10 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of MOSFET turn on gate resistor Qrr = f(IC) Qrr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Figure 11 D1, D2, D3, D4, D5, D6 FWD Figure 12 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of MOSFET turn on gate resistor IRRM = f(IC) IRRM = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Half Bridge Configuration IRRM High T IRRM Low T 0 4 8 12 16 20 0 4 8 12 16 20 R gon ( ?) I rrM (A) Qrr High T Qrr Low T 0 0,1 0,2 0,3 0,4 0,5 0 4 8 12 16 20 R gon ( ?) Q rr ( ? C) IRRM High T IRRM Low T 0 4 8 12 16 20 0 5 10 15 20 25 30 I C (A) I rrM (A) Qrr High T Qrr Low T 0,0 0,1 0,2 0,3 0,4 0,5 0 5 10 15 20 25 30 I C (A) Q rr ( ? C) copyright Vincotech 7 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 13 D1, D2, D3, D4, D5, D6 FWD Figure 14 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of MOSFET turn on gate resistor dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Half Bridge Configuration dI0/dt T dIrec/dt T 0 1000 2000 3000 4000 5000 0 4 8 12 16 20 R gon ( ?) di rec / dt (A/ms) di0/dtT dIrec/dt T 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 30 I C (A) di rec / dt (A/ms) copyright Vincotech 8 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Typical output characteristics Typical output characteristics IC = f(VCE) IC = f(VCE) At At tp = 250 ?s tp = 250 ?s Tj = 25 °C Tj = 125 °C VGE from -4 V to 20 V in steps of 2 V VGE from -4 V to 20 V in steps of 2 V Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 D1, D2, D3, D4, D5, D6 FWD Typical transfer characteristics Typical diode forward current as IC = f(VGE) a function of forward voltage IF = f(VF) At At tp = 250 ?s tp = 250 ?s VCE = 10 V T1, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 -60 -40 -20 0 20 40 60 80 -8 -6 -4 -2 0 2 4 6 8 10 12 14 VCE (V) I C (A) 0 4 8 12 16 20 0 2 4 6 8 10 12 VGE (V) I C (A) Tj = 25°C Tj = Tjmax-25°C 0 3 6 9 12 15 0 1 2 3 4 5 VF (V) I F (A) Tj = 25°C Tj = Tjmax-25°C -60 -40 -20 0 20 40 60 80 -8 -6 -4 -2 0 2 4 6 8 10 12 14 VCE (V) I C (A) copyright Vincotech 9 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 7 D1, D2, D3, D4, D5, D6 FWD Figure 8 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(Ic) Erec = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Splitted Configuration Erec High T Erec Low T 0 0,02 0,04 0,06 0,08 0,1 0 5 10 15 20 25 30 I C (A) E (mWs) Erec High T Erec Low T 0 0,02 0,04 0,06 0,08 0,1 0 4 8 12 16 20 R G ( ? ? ? ? ) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,3 0,6 0,9 1,2 1,5 0 5 10 15 20 25 30 I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,3 0,6 0,9 1,2 1,5 0 4 8 12 16 20 R G ( ? ? ? ? ) E (mWs) copyright Vincotech 10 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 9 T1, T2, T3, T4, T5, T6 MOSFET Figure 10 T1, T2, T3, T4, T5, T6 MOSFET Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(IC) t = f(RG) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 11 D1, D2, D3, D4, D5, D6 FWD Figure 12 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of MOSFET turn on gate resistor trr = f(Ic) trr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Splitted Configuration tdoff tf tdon tr 0,001 0,01 0,1 1 0 5 10 15 20 25 30 I C (A) t ( ? s) tdoff tf tdon tr 0,001 0,01 0,1 1 0 4 8 12 16 20 R G ( ? ? ? ? ) t ( ? s) trr High T trr Low T 0 0,02 0,04 0,06 0,08 0,1 0 4 8 12 16 20 R gon ( ?) t rr (ms) trr High T trr Low T 0 0,02 0,04 0,06 0,08 0,1 0 5 10 15 20 25 30 I C (A) t rr (ms) copyright Vincotech 11 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 13 D1, D2, D3, D4, D5, D6 FWD Figure 14 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of MOSFET turn on gate resistor Qrr = f(IC) Qrr = f(Rgon) At At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Figure 15 D1, D2, D3, D4, D5, D6 FWD Figure 16 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of MOSFET turn on gate resistor IRRM = f(IC) IRRM = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Splitted Configuration IRRM High T IRRM Low T 0 3 6 9 12 15 0 4 8 12 16 20 R gon ( ?) I rrM (A) Qrr High T Qrr Low T 0 0,1 0,2 0,3 0,4 0 4 8 12 16 20 R gon ( ?) Q rr ( ? C) IRRM High T IRRM Low T 0 3 6 9 12 15 0 5 10 15 20 25 30 I C (A) I rrM (A) Qrr High T Qrr Low T 0,0 0,1 0,2 0,3 0,4 0 5 10 15 20 25 30 I C (A) Q rr ( ? C) copyright Vincotech 12 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 17 D1, D2, D3, D4, D5, D6 FWD Figure 18 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of MOSFET turn on gate resistor dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Splitted Configuration dIrec/dt T dI0/dt T 0 1000 2000 3000 4000 5000 0 5 10 15 20 R gon ( ?) di rec / dt (A/ms) dIrec/dt T dIo/dt T 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 I C (A) di rec / dt (A/ms) copyright Vincotech 13 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 19 T1, T2, T3, T4, T5, T6 MOSFET Figure 20 D1, D2, D3, D4, D5, D6 FWD MOSFET transient thermal impedance FWD transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) At At D = tp / T D = tp / T RthJH = 1,41 K/W RthJH = 3,07 K/W IGBT thermal model values FWD thermal model values R (C/W) Tau (s) R (C/W) Tau (s) 0,12 1,0E+00 0,06 3,5E+00 0,39 1,7E-01 0,14 5,2E-01 0,68 6,1E-02 1,00 7,8E-02 0,12 5,5E-03 0,83 2,6E-02 0,10 8,0E-04 0,64 5,8E-03 0,40 1,3E-03 T1, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 t p (s) Z thJH (K/W) 10 1 10 0 10-1 10-2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) Z thJH (K/W) 10 1 10 0 10-1 10-2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 copyright Vincotech 14 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 21 T1, T2, T3, T4, T5, T6 MOSFET Figure 22 T1, T2, T3, T4, T5, T6 MOSFET Power dissipation as a Collector current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th) IC = f(Th) At At Tj = 150 ?C Tj = 150 ?C VGE = 15 V Figure 23 D1, D2, D3, D4, D5, D6 FWD Figure 24 D1, D2, D3, D4, D5, D6 FWD Power dissipation as a Forward current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th) IF = f(Th) At At Tj = 175 ?C Tj = 175 ?C T1, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 0 25 50 75 100 125 0 50 100 150 200 T h ( o C) P tot (W) 0 5 10 15 20 25 30 0 50 100 150 200 T h ( o C) I C (A) 0 10 20 30 40 50 60 0 50 100 150 200 Th ( o C) P tot (W) 0 3 6 9 12 15 0 50 100 150 200 Th ( o C) I F (A) copyright Vincotech 15 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 25 T1, T2, T3, T4, T5, T6 MOSFET Figure 26 T1, T2, T3, T4, T5, T6 MOSFET Safe operating area as a function Gate voltage vs Gate charge of drain-source voltage ID = f(VDS) VGS = f(Qg) At At D = single pulse IDS = 20 A Th = 80 ?C VDS= 800 V VGS = 0 V IGS= 10 mA Tj = Tjmax ?C Tj = 25 ?C T1, T2, T3, T4, T5, T6 VDS (V) I D (A) 10 2 100 10-1 101 10 3 10 0 10uS 100uS 1mS 10mS 100mS DC 10 2 101 0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 Qg (nC) U GS (V) copyright Vincotech 16 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(ID) E = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VDS = 700 V VDS = 700 V VGS = 16 V VGS = 16 V Rgon = 1 ? ID = 16 A Rgoff = 1 ? Figure 3 D1, D2, D3, D4, D5, D6 FWD Figure 4 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor Erec = f(Ic) Erec = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VDS = 700 V VDS = 700 V VGS = 16 V VGS = 16 V Rgon = 1 ? ID = 16 A Rgoff = 1 ? Booster Configuration Erec High T Erec Low T 0 0,01 0,02 0,03 0,04 0,05 0 5 10 15 20 25 30 I C (A) E (mWs) Erec High T Erec Low T 0 0,01 0,02 0,03 0,04 0,05 0 4 8 12 16 20 R G ( ? ? ? ? ) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,4 0,8 1,2 1,6 2 0 5 10 15 20 25 30 I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,4 0,8 1,2 1,6 2 0 4 8 12 16 20 R G ( ? ? ? ? ) E (mWs) copyright Vincotech 17 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(ID) t = f(RG) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C VDS = 700 V VDS = 700 V VGS = 16 V VGS = 16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 7 D1, D2, D3, D4, D5, D6 FWD Figure 8 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of MOSFET turn on gate resistor trr = f(Ic) trr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = 16 V IF = 16 A Rgon = 1 ? VGS = 16 V Booster Configuration tdoff tf tdon tr 0,001 0,01 0,1 1 0 5 10 15 20 25 30 I D (A) t ( m s) tdoff tf tdon tr 0,001 0,01 0,1 1 0 4 8 12 16 20 R G ( ?) t ( m s) trr High T trr Low T 0 0,003 0,006 0,009 0,012 0,015 0 4 8 12 16 20 R Gon ( ?) t rr ( m s) trr High T trr Low T 0 0,003 0,006 0,009 0,012 0,015 0 5 10 15 20 25 30 I C (A) t rr ( m s) copyright Vincotech 18 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 9 D1, D2, D3, D4, D5, D6 FWD Figure 10 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of MOSFET turn on gate resistor Qrr = f(IC) Qrr = f(Rgon) At At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = 16 V IF = 16 A Rgon = 1 ? VGS = 16 V Figure 11 D1, D2, D3, D4, D5, D6 FWD Figure 12 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of MOSFET turn on gate resistor IRRM = f(IC) IRRM = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = 16 V IF = 16 A Rgon = 1 ? VGS = 16 V Booster Configuration IRRM High T IRRM Low T 0 2 4 6 8 10 12 0 4 8 12 16 20 R Gon ( ?) I rrM (A) Qrr High T Qrr Low T 0 0,03 0,06 0,09 0,12 0,15 0 4 8 12 16 20 R Gon ( ?) Q rr ( ? C) IRRM High T IRRM Low T 0 2 4 6 8 10 12 0 5 10 15 20 25 30 I C (A) I rrM (A) Qrr High T Qrr Low T 0 0,03 0,06 0,09 0,12 0,15 0 5 10 15 20 25 30 I C (A) Q rr ( ? C) copyright Vincotech 19 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 13 D1, D2, D3, D4, D5, D6 FWD Figure 14 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of MOSFET turn on gate resistor dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = 16 V IF = 16 A Rgon = 1 ? VGS = 16 V Booster Configuration 0 800 1600 2400 3200 4000 0 4 8 12 16 20 R Gon ( ?) di rec / dt (A/ ? s) dI0/dt dIrec/dt 0 800 1600 2400 3200 4000 0 5 10 15 20 25 30 I C (A) di rec / dt (A/ ? s) dI0/dt dIrec/dt copyright Vincotech 20 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 1 Thermistor Typical NTC characteristic as a function of temperature RT = f(T) Thermistor NTC-typical temperature characteristic 0 4000 8000 12000 16000 20000 24000 25 50 75 100 125 T (°C) R/ ? copyright Vincotech 21 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj 125 °C Rgon 1 ? Rgoff 1 ? Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon (tEoff = integrating time for Eoff) (tEon = integrating time for Eon) VGE (0%) = 0 V VGE (0%) = 0 V VGE (100%) = 16 V VGE (100%) = 16 V VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tdoff = 0,079 ?s tdon = 0,016 ?s tEoff = 0,107 ?s tEon = 0,057 ?s Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tf = 0,074 ?s tr = 0,005 ?s Switching Definitions Half Bridge Configuration General conditions = = = IC 1% VCE 90% VGE 90% -50 -25 0 25 50 75 100 125 -0,08 -0,05 -0,02 0,01 0,04 0,07 0,1 time (us) % tdoff tEoff VCE IC VGE IC 10% VGE 10% tdon VCE 3% -50 0 50 100 150 200 2,95 2,99 3,03 3,07 3,11 time(us) % IC VCE tEon VGE fitted IC10% IC 90% IC 60% IC 40% -50 -25 0 25 50 75 100 125 -0,06 -0,03 0 0,03 0,06 0,09 0,12 0,15 time (us) % VCE IC tf IC 10% IC 90% -50 0 50 100 150 200 2,99 3 3,01 3,02 3,03 3,04 3,05 time(us) % VCE IC tr copyright Vincotech 22 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon Poff (100%) = 11,16 kW Pon (100%) = 11,16 kW Eoff (100%) = 0,08 mJ Eon (100%) = 0,f20;BACKGROUND-COLOR:#4ae2f7">28 mJ tEoff = 0,107 ?s tEon = 0,057 ?s Figure 7 D1, D2, D3, D4, D5, D6 FWD Turn-off Switching Waveforms & definition of trr Vd (100%) = 700 V Id (100%) = 16 A IRRM (100%) = -16 A trr = 0,017 ?s Switching Definitions Half Bridge Configuration IC 1% VGE 90% -50 -25 0 25 50 75 100 125 -0,06 -0,04 -0,02 0 0,02 0,04 0,06 0,08 0,1 time (us) % Poff Eoff tEoff VCE 3% VGE 10% -25 0 25 50 75 100 125 150 2,97 2,99 3,01 3,03 3,05 3,07 3,09 time(us) % Pon Eon tEon IRRM 10% IRRM 90% IRRM 100% trr -150 -100 -50 0 50 100 150 3 3,012 3,024 3,036 3,048 3,06 time(us) % Id Vd fitted copyright Vincotech 23 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 8 D1, D2, D3, D4, D5, D6 FWD Figure 9 D1, D2, D3, D4, D5, D6 FWD Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec (tQrr = integrating time for Qrr) (tErec= integrating time for Erec) Id (100%) = 16 A Prec (100%) = 11,16 kW Qrr (100%) = 0,30 ?C Erec (100%) = 0,12 mJ tQrr = 0,033 ?s tErec = 0,033 ?s Figure 10 Half Bridge Configuration switching measurement circuit Measurement circuit Switching Definitions Half Bridge Configuration tQrr -150 -100 -50 0 50 100 150 3 3,01 3,02 3,03 3,04 3,05 3,06 time(us) % Id Qrr -50 -25 0 25 50 75 100 125 150 3 3,01 3,02 3,03 3,04 3,05 3,06 time(us) % Prec Erec tErec V Vce V Vge D1 D2 Q Q 0.00001 Q Q 0.000003 Q Q +16V -5V 4Ohm 4Ohm A Ic VDC 700 L 705uH T1 T2 V Vcc -8V copyright Vincotech 24 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj 124 °C Rgon 1 ? Rgoff 1 ? Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon (tEoff = integrating time for Eoff) (tEon = integrating time for Eon) VGE (0%) = 0 V VGE (0%) = 0 V VGE (100%) = -6/16 V VGE (100%) = -6/16 V VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tdoff = 0,075 ?s tdon = 0,016 ?s tEoff = 0,113 ?s tEon = 0,064 ?s Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tf = 0,010 ?s tr = 0,006 ?s Switching Definitions Splitted Configuration General conditions = = = IC 1% VCE 90% VGE 90% -50 -25 0 25 50 75 100 125 -0,07 -0,04 -0,01 0,02 0,05 0,08 0,11 time (us) % tdoff tEoff VCE IC VGE IC 10% VGE 10% tdon VCE 3% -50 0 50 100 150 200 2,95 2,975 3 3,025 3,05 3,075 3,1 time(us) % IC VCE tEon VGE fitted IC10% IC 90% IC 60% IC 40% -50 -25 0 25 50 75 100 125 0,02 0,03 0,04 0,05 0,06 0,07 time (us) % VCE IC tf IC 10% IC 90% -25 0 25 50 75 100 125 150 175 2,99 3 3,01 3,02 3,03 3,04 time(us) % VCE IC tr copyright Vincotech 25 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon Poff (100%) = 11,23 kW Pon (100%) = 11,23 kW Eoff (100%) = 0,095 mJ Eon (100%) = 0,223 mJ tEoff = 0,113 ?s tEon = 0,064 ?s Figure 7 D1, D2, D3, D4, D5, D6 FWD Turn-off Switching Waveforms & definition of trr Vd (100%) = 700 V Id (100%) = 16 A IRRM (100%) = -12 A trr = 0,047 ?s Switching Definitions Splitted Configuration IC 1% VGE 90% -50 -25 0 25 50 75 100 125 -0,06 -0,04 -0,02 0 0,02 0,04 0,06 0,08 0,1 time (us) % Poff Eoff tEoff VCE 3% VGE 10% -25 0 25 50 75 100 125 2,97 2,99 3,01 3,03 3,05 3,07 3,09 time(us) % Pon Eon tEon IRRM 10% IRRM 90% IRRM 100% trr -150 -100 -50 0 50 100 150 3 3,02 3,04 3,06 3,08 3,1 time(us) % Id Vd fitted copyright Vincotech 26 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 8 D1, D2, D3, D4, D5, D6 FWD Figure 9 D1, D2, D3, D4, D5, D6 FWD Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec (tQrr = integrating time for Qrr) (tErec= integrating time for Erec) Id (100%) = 16 A Prec (100%) = 11,23 kW Qrr (100%) = 0,27 ?C Erec (100%) = 0,05 mJ tQrr = 0,100 ?s tErec = 0,100 ?s Figure 10 Splitted Configuration switching measurement circuit Measurement circuit Switching Definitions Splitted Configuration tQrr -100 -50 0 50 100 150 2,95 3 3,05 3,1 3,15 3,2 time(us) % Id Qrr -25 0 25 50 75 100 125 2,95 3 3,05 3,1 3,15 3,2 time(us) % Prec Erec tErec V Vce V Vge D1 D2 Q Q 0.00001 Q Q 0.000003 Q Q +16V -8V 4Ohm 4Ohm A Ic VDC 700 L 705uH T1 T2 V Vcc 1uH V Vd Vd used for T2 dody diode Erec calculation -8V copyright Vincotech 27 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj 124 °C Rgon 1 ? Rgoff 1 ? Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon (tEoff = integrating time for Eoff) (tEon = integrating time for Eon) VGE (0%) = 0 V VGE (0%) = 0 V VGE (100%) = 16 V VGE (100%) = 16 V VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tdoff = 0,106 ?s tdon = 0,012 ?s tEoff = 0,136 ?s tEon = 0,067 ?s Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tf = 0,005 ?s tr = 0,007 ?s Switching Definitions Booster Configuration General conditions = = = IC 1% VCE 90% VGE 90% -25 0 25 50 75 100 125 -0,07 -0,04 -0,01 0,02 0,05 0,08 0,11 0,14 time (us) % tdoff tEoff VCE IC VGE IC 10% VGE 10% tdon VCE 3% -50 0 50 100 150 200 2,95 2,98 3,01 3,04 3,07 3,1 time(us) % IC VCE tEon VGE fitted IC10% IC 90% IC 60% IC 40% -25 0 25 50 75 100 125 0,06 0,07 0,08 0,09 0,1 0,11 time (us) % VCE IC tf IC 10% IC 90% -25 0 25 50 75 100 125 150 175 2,99 3 3,01 3,02 3,03 3,04 3,05 time(us) % VCE IC tr copyright Vincotech f20;BACKGROUND-COLOR:#4ae2f7">28 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon Poff (100%) = 11,23 kW Pon (100%) = 11,23 kW Eoff (100%) = 0,18 mJ Eon (100%) = 0,24 mJ tEoff = 0,136 ?s tEon = 0,067 ?s Figure 7 D1, D2, D3, D4, D5, D6 FWD Turn-off Switching Waveforms & definition of trr Vd (100%) = 700 V Id (100%) = 16 A IRRM (100%) = -10 A trr = 0,010 ?s Switching Definitions Booster Configuration IC 1% VGE 90% -25 0 25 50 75 100 125 -0,07 -0,04 -0,01 0,02 0,05 0,08 0,11 0,14 time (us) % Poff Eoff tEoff VCE 3% VGE 10% -25 0 25 50 75 100 125 150 2,98 3 3,02 3,04 3,06 3,08 3,1 time(us) % Pon Eon tEon IRRM 10% IRRM 90% IRRM 100% trr -75 -50 -25 0 25 50 75 100 125 3,01 3,018 3,026 3,034 3,042 3,05 time(us) % Id Vd fitted copyright Vincotech 29 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 8 D1, D2, D3, D4, D5, D6 FWD Figure 9 D1, D2, D3, D4, D5, D6 FWD Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec (tQrr = integrating time for Qrr) (tErec= integrating time for Erec) Id (100%) = 16 A Prec (100%) = 11,23 kW Qrr (100%) = 0,11 ?C Erec (100%) = 0,04 mJ tQrr = 0,019 ?s tErec = 0,019 ?s Figure 10 Booster Configuration switching measurement circuit Measurement circuit Switching Definitions Booster Configuration tQrr -100 -50 0 50 100 150 200 3 3,01 3,02 3,03 3,04 3,05 3,06 time(us) % Id Qrr -100 -50 0 50 100 150 200 250 300 350 400 450 500 550 600 3 3,01 3,02 3,03 3,04 3,05 time(us) % Prec Erec tErec V Vce V Vge D1 D2 Q Q 0.00001 Q Q 0.000003 Q Q +16V 0V 4Ohm 4Ohm A Ic 700 VDC 705uH L T1 T2 V Vcc -8V copyright Vincotech 30 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y in DataMatrix as in packaging barcode as M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Pin X Y 1 33,4 0 2 25,4 0 3 25,05 2,8 4 25,05 5,6 5 22,25 5,6 6 22,25 2,8 7 22,25 0 8 14,25 0 9 8 0 10 0 0 11 0 2,8 12 0 5,6 13 0 22,2 14 7,15 22,2 15 7,75 19,2 16 7,75 16,4 17 8,35 10,2 18 11,15 11,5 19 13,75 16,4 20 13,75 19,2 21 13,15 22,2 22 19,65 22,2 23 25,65 22,2 24 33,4 22,2 25 31,55 19,2 26 31,55 16,4 Pinout Ordering Code & Marking Ordering Code and Marking - Outline - Pinout Version w/o thermal paste 12mm housing Press-fit pin Pin table Outline Ordering Code 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y copyright Vincotech 31 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y DISCLAIMER LIFE SUPPORT POLICY As used herein: Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. copyright Vincotech 32 Revision: 1
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10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y flow3xPHASE-SiC 1200V / 80m? Solar Inverter Charger Power Supply 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj=25°C, unless otherwise specified Parameter Symbol Value Unit T1, T2, T3, T4, T5, T6 VDS 1200 V Tjmax 150 °C D1, D2, D3, D4, D5, D6 50 Th=80°C 10 23 tp=8,3ms Tj=Tjmax A °C W 31 tp limited by Tjmax 1200 Tj=25°C 25 175 Th=80°C Tj=Tjmax Repetitive Peak Forward Surge Current Tjmax VRRM Ptot IFSM IFRM A A W Th=80°C ID Th=80°C 19 Tj=Tjmax Tj=Tjmax tp limited by Tjmax Features flow 0 12mm housing Target Applications Condition Types Maximum Ratings Schematic SiC-Power MOSFET?s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) V -6/+22 Maximum Junction Temperature VGS Power dissipation Gate-source peak voltage Ptot Ultra Low Inductance with integrated DC-capacitors Switching frequency >100kHz A V A 80 Pulsed drain current Maximum Junction Temperature Non-Repetitive Peak Forward Surge Current Peak Repetitive Reverse Voltage Forward average current Power dissipation per Diode IFAV Temperature sensor Drain to source breakdown voltage DC drain current IDpulse copyright Vincotech 1 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj=25°C, unless otherwise specified Parameter Symbol Value Unit Condition Maximum Ratings C1, C2, C3 Thermal Properties Insulation Properties t=2s DC voltage 4000 V min 12,7 mm min 9,9 mm °C Storage temperature Tstg -40…+125 °C Max.DC voltage 1000 Clearance Insulation voltage Creepage distance Top Operation temperature under switching condition -40…+(Tjmax - 25) VMAX Tc=25°C V copyright Vincotech 2 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max T1, T2, T3, T4, T5, T6 Tj=25°C 70,00 Tj=125°C 115,00 Tj=25°C 1,6 4 Tj=125°C Tj=25°C 100 Tj=125°C Tj=25°C 10 Tj=125°C Tj=25°C 0,8 1,40 1,7 Tj=125°C 1,73 Tj=25°C 100 Tj=125°C Thermal resistance chip to heatsink per chip RthJH Phase-Change Material 3,07 K/W Tj=25°C 14 Tj=125°C 13 Tj=25°C 7 Tj=125°C 7 Tj=25°C 96 Tj=125°C 106 Tj=25°C 5 Tj=125°C 5 Tj=25°C 0,333 Tj=125°C 0,244 Tj=25°C 0,190 Tj=125°C 0,178 Tj=25°C 9 Tj=125°C 10 Tj=25°C 10 Tj=125°C 10 Tj=25°C 0,080 Tj=125°C 0,110 Tj=25°C 0,025 Tj=125°C 0,042 di(rec)max Tj=25°C 1960 /dt Tj=125°C 2220 ? 9 Zero Gate Voltage Drain Current Idss Internal Gate Resistance RG f=1MHz; open Drain ?A 1200 0 A/?s 16 Qrr trr IRRM Erec Rgon=1 ? Reverse recovered energy Peak rate of fall of recovery current D1, D2, D3, D4, D5, D6 td(ON) T1, T2, T3, T4, T5, T6 Turn-on energy loss per pulse Eon Eoff Characteristic Values Value Conditions V(GS)th 16 700 16 Rgon=1 ? tr td(OFF) Fall time Turn-off energy loss per pulse Turn off delay time tf Rgoff=1 ? Rise Time Turn On Delay Time Peak recovery current Reverse recovery time Reverse recovery charge 700 16 mWs A ns ?C ns mWs 106 31 nC pF nA Gate to Source Leakage Current Igss -6/22 m? Gate threshold voltage V 0,0044 Static drain to source ON resistance RDS(on) 20 VDS = VGS 20 Total gate charge Qg 18 400 10 Tj=25°C f=1MHz 0 Reverse transfer capacitance Gate to drain charge Qgd Crss Output capacitance Coss Input capacitance Ciss Thermal resistance chip to heatsink per chip RthJH Phase-Change Material Gate to source charge Qgs 27 77 800 2080 16 K/W 1200 1,41 V 5 D1, D2, D3, D4, D5, D6 Forward voltage VF Irm Single ended configuration Reverse leakage current ?A copyright Vincotech 3 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Characteristic Values Value Conditions Tj=25°C 13 Tj=125°C 16 Tj=25°C 18 Tj=125°C 17 Tj=25°C 0,220 Tj=125°C 0,300 di(rec)max Tj=25°C 3080 /dt Tj=125°C 3572 Tj=25°C 0,067 Tj=125°C 0,119 Tj=25°C 17 Tj=125°C 16 Tj=25°C 6 Tj=125°C 5 Tj=25°C 75 Tj=125°C 79 Tj=25°C 30 Tj=125°C 74 Tj=25°C 0,330 Tj=125°C 0,f20;BACKGROUND-COLOR:#4ae2f7">280 Tj=25°C 0,080 Tj=125°C 0,080 Tj=25°C 16 Tj=125°C 16 Tj=25°C 6 Tj=125°C 6 Tj=25°C 71 Tj=125°C 75 Tj=25°C 12 Tj=125°C 10 Tj=25°C 0,310 Tj=125°C 0,220 Tj=25°C 0,110 Tj=125°C 0,090 Tj=25°C 10 Tj=125°C 12 Tj=25°C 47 Tj=125°C 47 Tj=25°C 0,2 Tj=125°C 0,2 di(rec)max Tj=25°C 1373 /dt Tj=125°C 1302 Tj=25°C 0,05 Tj=125°C 0,06 -6/16 Rgon=1 ? ns mWs ns 47 16 Rgoff=1 ? Rgon=1 ? tr td(OFF) Qrr trr Erec IRRM Rise time T1, T2, T3, T4, T5, T6 Turn-on delay time tf Eoff tr td(on) Eon td(off) Turn-off energy loss per pulse Reverse recovery time Turn-off delay time Peak reverse recovery current D1, D2, D3, D4, D5, D6 Turn-on energy loss per pulse Fall time Turn On Delay Time Turn off delay time Turn-off energy loss per pulse Fall time Turn-on energy loss per pulse Eoff Eon tf td(ON) 700 16 T1, T2, T3, T4, T5, T6 Reverse recovered charge Rise Time Reverse recovered energy Peak rate of fall of recovery current 22000 T=25°C 5 -5 2 ? mWs ?C A/?s ns A nF Rgon=1 ? T=25°C T=25°C T=25°C Thermistor R100=1486 ? ?R/R Power dissipation constant Rated resistance R 700 -6/16 C Reverse recovery energy Reverse recovered charge C1, C2, C3 C value Erec Peak rate of fall of recovery current Qrr Peak reverse recovery current -6/16 D1, D2, D3, D4, D5, D6 Rgon=1 ? Rgoff=1 ? 16 700 -6/16 ns A ?C mWs A/?s mWs B-value B(25/50) Tol. ±3% trr Deviation of R100 Power dissipation P IRRM B-value B(25/100) Tol. ±3% Vincotech NTC Reference Reverse recovery time 700 K mW/K % mW K Splitted output configuration T=25°C 3996 B 16 T=25°C 3950 200 Half bridge configuration copyright Vincotech 4 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 3 D1, D2, D3, D4, D5, D6 FWD Figure 4 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(Ic) Erec = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Half Bridge Configuration Eon High T Eoff High T Eon Low T Eoff Low T 0 0,3 0,6 0,9 1,2 1,5 0 5 10 15 20 25 30 I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,3 0,6 0,9 1,2 1,5 0 4 8 12 16 20 R G ( ?) E (mWs) Erec High T Erec Low T 0,00 0,04 0,08 0,12 0,16 0,20 0 5 10 15 20 25 30 I C (A) E (mWs) Erec High T Erec Low T 0,00 0,04 0,08 0,12 0,16 0,20 0 4 8 12 16 20 R G ( ?) E (mWs) copyright Vincotech 5 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(IC) t = f(RG) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 7 D1, D2, D3, D4, D5, D6 FWD Figure 8 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of MOSFET turn on gate resistor trr = f(Ic) trr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Half Bridge Configuration tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 5 10 15 20 25 30 I C (A) t (ms) trr High T trr Low T 0 0,03 0,06 0,09 0,12 0,15 0 4 8 12 16 20 R gon ( ?) t rr (ms) tdoff tf tdon tr 0,00 0,01 0,10 1,00 0 4 8 12 16 20 R G ( ?) t (ms) trr High T trr Low T 0 0,005 0,01 0,015 0,02 0,025 0,03 0 5 10 15 20 25 30 I C (A) t rr (ms) copyright Vincotech 6 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 9 D1, D2, D3, D4, D5, D6 FWD Figure 10 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of MOSFET turn on gate resistor Qrr = f(IC) Qrr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Figure 11 D1, D2, D3, D4, D5, D6 FWD Figure 12 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of MOSFET turn on gate resistor IRRM = f(IC) IRRM = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Half Bridge Configuration IRRM High T IRRM Low T 0 4 8 12 16 20 0 4 8 12 16 20 R gon ( ?) I rrM (A) Qrr High T Qrr Low T 0 0,1 0,2 0,3 0,4 0,5 0 4 8 12 16 20 R gon ( ?) Q rr ( ? C) IRRM High T IRRM Low T 0 4 8 12 16 20 0 5 10 15 20 25 30 I C (A) I rrM (A) Qrr High T Qrr Low T 0,0 0,1 0,2 0,3 0,4 0,5 0 5 10 15 20 25 30 I C (A) Q rr ( ? C) copyright Vincotech 7 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 13 D1, D2, D3, D4, D5, D6 FWD Figure 14 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of MOSFET turn on gate resistor dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Half Bridge Configuration dI0/dt T dIrec/dt T 0 1000 2000 3000 4000 5000 0 4 8 12 16 20 R gon ( ?) di rec / dt (A/ms) di0/dtT dIrec/dt T 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 25 30 I C (A) di rec / dt (A/ms) copyright Vincotech 8 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Typical output characteristics Typical output characteristics IC = f(VCE) IC = f(VCE) At At tp = 250 ?s tp = 250 ?s Tj = 25 °C Tj = 125 °C VGE from -4 V to 20 V in steps of 2 V VGE from -4 V to 20 V in steps of 2 V Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 D1, D2, D3, D4, D5, D6 FWD Typical transfer characteristics Typical diode forward current as IC = f(VGE) a function of forward voltage IF = f(VF) At At tp = 250 ?s tp = 250 ?s VCE = 10 V T1, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 -60 -40 -20 0 20 40 60 80 -8 -6 -4 -2 0 2 4 6 8 10 12 14 VCE (V) I C (A) 0 4 8 12 16 20 0 2 4 6 8 10 12 VGE (V) I C (A) Tj = 25°C Tj = Tjmax-25°C 0 3 6 9 12 15 0 1 2 3 4 5 VF (V) I F (A) Tj = 25°C Tj = Tjmax-25°C -60 -40 -20 0 20 40 60 80 -8 -6 -4 -2 0 2 4 6 8 10 12 14 VCE (V) I C (A) copyright Vincotech 9 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(IC) E = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 7 D1, D2, D3, D4, D5, D6 FWD Figure 8 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor Erec = f(Ic) Erec = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Splitted Configuration Erec High T Erec Low T 0 0,02 0,04 0,06 0,08 0,1 0 5 10 15 20 25 30 I C (A) E (mWs) Erec High T Erec Low T 0 0,02 0,04 0,06 0,08 0,1 0 4 8 12 16 20 R G ( ? ? ? ? ) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,3 0,6 0,9 1,2 1,5 0 5 10 15 20 25 30 I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,3 0,6 0,9 1,2 1,5 0 4 8 12 16 20 R G ( ? ? ? ? ) E (mWs) copyright Vincotech 10 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 9 T1, T2, T3, T4, T5, T6 MOSFET Figure 10 T1, T2, T3, T4, T5, T6 MOSFET Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(IC) t = f(RG) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C VCE = 700 V VCE = 700 V VGE = -6/16 V VGE = -6/16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 11 D1, D2, D3, D4, D5, D6 FWD Figure 12 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of MOSFET turn on gate resistor trr = f(Ic) trr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Splitted Configuration tdoff tf tdon tr 0,001 0,01 0,1 1 0 5 10 15 20 25 30 I C (A) t ( ? s) tdoff tf tdon tr 0,001 0,01 0,1 1 0 4 8 12 16 20 R G ( ? ? ? ? ) t ( ? s) trr High T trr Low T 0 0,02 0,04 0,06 0,08 0,1 0 4 8 12 16 20 R gon ( ?) t rr (ms) trr High T trr Low T 0 0,02 0,04 0,06 0,08 0,1 0 5 10 15 20 25 30 I C (A) t rr (ms) copyright Vincotech 11 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 13 D1, D2, D3, D4, D5, D6 FWD Figure 14 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of MOSFET turn on gate resistor Qrr = f(IC) Qrr = f(Rgon) At At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Figure 15 D1, D2, D3, D4, D5, D6 FWD Figure 16 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of MOSFET turn on gate resistor IRRM = f(IC) IRRM = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Splitted Configuration IRRM High T IRRM Low T 0 3 6 9 12 15 0 4 8 12 16 20 R gon ( ?) I rrM (A) Qrr High T Qrr Low T 0 0,1 0,2 0,3 0,4 0 4 8 12 16 20 R gon ( ?) Q rr ( ? C) IRRM High T IRRM Low T 0 3 6 9 12 15 0 5 10 15 20 25 30 I C (A) I rrM (A) Qrr High T Qrr Low T 0,0 0,1 0,2 0,3 0,4 0 5 10 15 20 25 30 I C (A) Q rr ( ? C) copyright Vincotech 12 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 17 D1, D2, D3, D4, D5, D6 FWD Figure 18 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of MOSFET turn on gate resistor dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = -6/16 V IF = 16 A Rgon = 1 ? VGE = -6/16 V Splitted Configuration dIrec/dt T dI0/dt T 0 1000 2000 3000 4000 5000 0 5 10 15 20 R gon ( ?) di rec / dt (A/ms) dIrec/dt T dIo/dt T 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 I C (A) di rec / dt (A/ms) copyright Vincotech 13 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 19 T1, T2, T3, T4, T5, T6 MOSFET Figure 20 D1, D2, D3, D4, D5, D6 FWD MOSFET transient thermal impedance FWD transient thermal impedance as a function of pulse width as a function of pulse width ZthJH = f(tp) ZthJH = f(tp) At At D = tp / T D = tp / T RthJH = 1,41 K/W RthJH = 3,07 K/W IGBT thermal model values FWD thermal model values R (C/W) Tau (s) R (C/W) Tau (s) 0,12 1,0E+00 0,06 3,5E+00 0,39 1,7E-01 0,14 5,2E-01 0,68 6,1E-02 1,00 7,8E-02 0,12 5,5E-03 0,83 2,6E-02 0,10 8,0E-04 0,64 5,8E-03 0,40 1,3E-03 T1, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 t p (s) Z thJH (K/W) 10 1 10 0 10-1 10-2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) Z thJH (K/W) 10 1 10 0 10-1 10-2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 -5 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 copyright Vincotech 14 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 21 T1, T2, T3, T4, T5, T6 MOSFET Figure 22 T1, T2, T3, T4, T5, T6 MOSFET Power dissipation as a Collector current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th) IC = f(Th) At At Tj = 150 ?C Tj = 150 ?C VGE = 15 V Figure 23 D1, D2, D3, D4, D5, D6 FWD Figure 24 D1, D2, D3, D4, D5, D6 FWD Power dissipation as a Forward current as a function of heatsink temperature function of heatsink temperature Ptot = f(Th) IF = f(Th) At At Tj = 175 ?C Tj = 175 ?C T1, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 0 25 50 75 100 125 0 50 100 150 200 T h ( o C) P tot (W) 0 5 10 15 20 25 30 0 50 100 150 200 T h ( o C) I C (A) 0 10 20 30 40 50 60 0 50 100 150 200 Th ( o C) P tot (W) 0 3 6 9 12 15 0 50 100 150 200 Th ( o C) I F (A) copyright Vincotech 15 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 25 T1, T2, T3, T4, T5, T6 MOSFET Figure 26 T1, T2, T3, T4, T5, T6 MOSFET Safe operating area as a function Gate voltage vs Gate charge of drain-source voltage ID = f(VDS) VGS = f(Qg) At At D = single pulse IDS = 20 A Th = 80 ?C VDS= 800 V VGS = 0 V IGS= 10 mA Tj = Tjmax ?C Tj = 25 ?C T1, T2, T3, T4, T5, T6 VDS (V) I D (A) 10 2 100 10-1 101 10 3 10 0 10uS 100uS 1mS 10mS 100mS DC 10 2 101 0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 Qg (nC) U GS (V) copyright Vincotech 16 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(ID) E = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VDS = 700 V VDS = 700 V VGS = 16 V VGS = 16 V Rgon = 1 ? ID = 16 A Rgoff = 1 ? Figure 3 D1, D2, D3, D4, D5, D6 FWD Figure 4 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor Erec = f(Ic) Erec = f(RG) With an inductive load at With an inductive load at Tj = 25/125 °C Tj = 25/125 °C VDS = 700 V VDS = 700 V VGS = 16 V VGS = 16 V Rgon = 1 ? ID = 16 A Rgoff = 1 ? Booster Configuration Erec High T Erec Low T 0 0,01 0,02 0,03 0,04 0,05 0 5 10 15 20 25 30 I C (A) E (mWs) Erec High T Erec Low T 0 0,01 0,02 0,03 0,04 0,05 0 4 8 12 16 20 R G ( ? ? ? ? ) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,4 0,8 1,2 1,6 2 0 5 10 15 20 25 30 I C (A) E (mWs) Eoff High T Eon High T Eon Low T Eoff Low T 0 0,4 0,8 1,2 1,6 2 0 4 8 12 16 20 R G ( ? ? ? ? ) E (mWs) copyright Vincotech 17 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(ID) t = f(RG) With an inductive load at With an inductive load at Tj = 125 °C Tj = 125 °C VDS = 700 V VDS = 700 V VGS = 16 V VGS = 16 V Rgon = 1 ? IC = 16 A Rgoff = 1 ? Figure 7 D1, D2, D3, D4, D5, D6 FWD Figure 8 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of MOSFET turn on gate resistor trr = f(Ic) trr = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = 16 V IF = 16 A Rgon = 1 ? VGS = 16 V Booster Configuration tdoff tf tdon tr 0,001 0,01 0,1 1 0 5 10 15 20 25 30 I D (A) t ( m s) tdoff tf tdon tr 0,001 0,01 0,1 1 0 4 8 12 16 20 R G ( ?) t ( m s) trr High T trr Low T 0 0,003 0,006 0,009 0,012 0,015 0 4 8 12 16 20 R Gon ( ?) t rr ( m s) trr High T trr Low T 0 0,003 0,006 0,009 0,012 0,015 0 5 10 15 20 25 30 I C (A) t rr ( m s) copyright Vincotech 18 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 9 D1, D2, D3, D4, D5, D6 FWD Figure 10 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of MOSFET turn on gate resistor Qrr = f(IC) Qrr = f(Rgon) At At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = 16 V IF = 16 A Rgon = 1 ? VGS = 16 V Figure 11 D1, D2, D3, D4, D5, D6 FWD Figure 12 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of MOSFET turn on gate resistor IRRM = f(IC) IRRM = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = 16 V IF = 16 A Rgon = 1 ? VGS = 16 V Booster Configuration IRRM High T IRRM Low T 0 2 4 6 8 10 12 0 4 8 12 16 20 R Gon ( ?) I rrM (A) Qrr High T Qrr Low T 0 0,03 0,06 0,09 0,12 0,15 0 4 8 12 16 20 R Gon ( ?) Q rr ( ? C) IRRM High T IRRM Low T 0 2 4 6 8 10 12 0 5 10 15 20 25 30 I C (A) I rrM (A) Qrr High T Qrr Low T 0 0,03 0,06 0,09 0,12 0,15 0 5 10 15 20 25 30 I C (A) Q rr ( ? C) copyright Vincotech 19 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 13 D1, D2, D3, D4, D5, D6 FWD Figure 14 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of MOSFET turn on gate resistor dI0/dt,dIrec/dt = f(Ic) dI0/dt,dIrec/dt = f(Rgon) At At Tj = 25/125 °C Tj = 25/125 °C VCE = 700 V VR = 700 V VGE = 16 V IF = 16 A Rgon = 1 ? VGS = 16 V Booster Configuration 0 800 1600 2400 3200 4000 0 4 8 12 16 20 R Gon ( ?) di rec / dt (A/ ? s) dI0/dt dIrec/dt 0 800 1600 2400 3200 4000 0 5 10 15 20 25 30 I C (A) di rec / dt (A/ ? s) dI0/dt dIrec/dt copyright Vincotech 20 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 1 Thermistor Typical NTC characteristic as a function of temperature RT = f(T) Thermistor NTC-typical temperature characteristic 0 4000 8000 12000 16000 20000 24000 25 50 75 100 125 T (°C) R/ ? copyright Vincotech 21 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj 125 °C Rgon 1 ? Rgoff 1 ? Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon (tEoff = integrating time for Eoff) (tEon = integrating time for Eon) VGE (0%) = 0 V VGE (0%) = 0 V VGE (100%) = 16 V VGE (100%) = 16 V VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tdoff = 0,079 ?s tdon = 0,016 ?s tEoff = 0,107 ?s tEon = 0,057 ?s Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tf = 0,074 ?s tr = 0,005 ?s Switching Definitions Half Bridge Configuration General conditions = = = IC 1% VCE 90% VGE 90% -50 -25 0 25 50 75 100 125 -0,08 -0,05 -0,02 0,01 0,04 0,07 0,1 time (us) % tdoff tEoff VCE IC VGE IC 10% VGE 10% tdon VCE 3% -50 0 50 100 150 200 2,95 2,99 3,03 3,07 3,11 time(us) % IC VCE tEon VGE fitted IC10% IC 90% IC 60% IC 40% -50 -25 0 25 50 75 100 125 -0,06 -0,03 0 0,03 0,06 0,09 0,12 0,15 time (us) % VCE IC tf IC 10% IC 90% -50 0 50 100 150 200 2,99 3 3,01 3,02 3,03 3,04 3,05 time(us) % VCE IC tr copyright Vincotech 22 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon Poff (100%) = 11,16 kW Pon (100%) = 11,16 kW Eoff (100%) = 0,08 mJ Eon (100%) = 0,f20;BACKGROUND-COLOR:#4ae2f7">28 mJ tEoff = 0,107 ?s tEon = 0,057 ?s Figure 7 D1, D2, D3, D4, D5, D6 FWD Turn-off Switching Waveforms & definition of trr Vd (100%) = 700 V Id (100%) = 16 A IRRM (100%) = -16 A trr = 0,017 ?s Switching Definitions Half Bridge Configuration IC 1% VGE 90% -50 -25 0 25 50 75 100 125 -0,06 -0,04 -0,02 0 0,02 0,04 0,06 0,08 0,1 time (us) % Poff Eoff tEoff VCE 3% VGE 10% -25 0 25 50 75 100 125 150 2,97 2,99 3,01 3,03 3,05 3,07 3,09 time(us) % Pon Eon tEon IRRM 10% IRRM 90% IRRM 100% trr -150 -100 -50 0 50 100 150 3 3,012 3,024 3,036 3,048 3,06 time(us) % Id Vd fitted copyright Vincotech 23 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 8 D1, D2, D3, D4, D5, D6 FWD Figure 9 D1, D2, D3, D4, D5, D6 FWD Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec (tQrr = integrating time for Qrr) (tErec= integrating time for Erec) Id (100%) = 16 A Prec (100%) = 11,16 kW Qrr (100%) = 0,30 ?C Erec (100%) = 0,12 mJ tQrr = 0,033 ?s tErec = 0,033 ?s Figure 10 Half Bridge Configuration switching measurement circuit Measurement circuit Switching Definitions Half Bridge Configuration tQrr -150 -100 -50 0 50 100 150 3 3,01 3,02 3,03 3,04 3,05 3,06 time(us) % Id Qrr -50 -25 0 25 50 75 100 125 150 3 3,01 3,02 3,03 3,04 3,05 3,06 time(us) % Prec Erec tErec V Vce V Vge D1 D2 Q Q 0.00001 Q Q 0.000003 Q Q +16V -5V 4Ohm 4Ohm A Ic VDC 700 L 705uH T1 T2 V Vcc -8V copyright Vincotech 24 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj 124 °C Rgon 1 ? Rgoff 1 ? Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon (tEoff = integrating time for Eoff) (tEon = integrating time for Eon) VGE (0%) = 0 V VGE (0%) = 0 V VGE (100%) = -6/16 V VGE (100%) = -6/16 V VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tdoff = 0,075 ?s tdon = 0,016 ?s tEoff = 0,113 ?s tEon = 0,064 ?s Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tf = 0,010 ?s tr = 0,006 ?s Switching Definitions Splitted Configuration General conditions = = = IC 1% VCE 90% VGE 90% -50 -25 0 25 50 75 100 125 -0,07 -0,04 -0,01 0,02 0,05 0,08 0,11 time (us) % tdoff tEoff VCE IC VGE IC 10% VGE 10% tdon VCE 3% -50 0 50 100 150 200 2,95 2,975 3 3,025 3,05 3,075 3,1 time(us) % IC VCE tEon VGE fitted IC10% IC 90% IC 60% IC 40% -50 -25 0 25 50 75 100 125 0,02 0,03 0,04 0,05 0,06 0,07 time (us) % VCE IC tf IC 10% IC 90% -25 0 25 50 75 100 125 150 175 2,99 3 3,01 3,02 3,03 3,04 time(us) % VCE IC tr copyright Vincotech 25 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon Poff (100%) = 11,23 kW Pon (100%) = 11,23 kW Eoff (100%) = 0,095 mJ Eon (100%) = 0,223 mJ tEoff = 0,113 ?s tEon = 0,064 ?s Figure 7 D1, D2, D3, D4, D5, D6 FWD Turn-off Switching Waveforms & definition of trr Vd (100%) = 700 V Id (100%) = 16 A IRRM (100%) = -12 A trr = 0,047 ?s Switching Definitions Splitted Configuration IC 1% VGE 90% -50 -25 0 25 50 75 100 125 -0,06 -0,04 -0,02 0 0,02 0,04 0,06 0,08 0,1 time (us) % Poff Eoff tEoff VCE 3% VGE 10% -25 0 25 50 75 100 125 2,97 2,99 3,01 3,03 3,05 3,07 3,09 time(us) % Pon Eon tEon IRRM 10% IRRM 90% IRRM 100% trr -150 -100 -50 0 50 100 150 3 3,02 3,04 3,06 3,08 3,1 time(us) % Id Vd fitted copyright Vincotech 26 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 8 D1, D2, D3, D4, D5, D6 FWD Figure 9 D1, D2, D3, D4, D5, D6 FWD Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec (tQrr = integrating time for Qrr) (tErec= integrating time for Erec) Id (100%) = 16 A Prec (100%) = 11,23 kW Qrr (100%) = 0,27 ?C Erec (100%) = 0,05 mJ tQrr = 0,100 ?s tErec = 0,100 ?s Figure 10 Splitted Configuration switching measurement circuit Measurement circuit Switching Definitions Splitted Configuration tQrr -100 -50 0 50 100 150 2,95 3 3,05 3,1 3,15 3,2 time(us) % Id Qrr -25 0 25 50 75 100 125 2,95 3 3,05 3,1 3,15 3,2 time(us) % Prec Erec tErec V Vce V Vge D1 D2 Q Q 0.00001 Q Q 0.000003 Q Q +16V -8V 4Ohm 4Ohm A Ic VDC 700 L 705uH T1 T2 V Vcc 1uH V Vd Vd used for T2 dody diode Erec calculation -8V copyright Vincotech 27 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Tj 124 °C Rgon 1 ? Rgoff 1 ? Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tdoff, tEoff Turn-on Switching Waveforms & definition of tdon, tEon (tEoff = integrating time for Eoff) (tEon = integrating time for Eon) VGE (0%) = 0 V VGE (0%) = 0 V VGE (100%) = 16 V VGE (100%) = 16 V VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tdoff = 0,106 ?s tdon = 0,012 ?s tEoff = 0,136 ?s tEon = 0,067 ?s Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tf Turn-on Switching Waveforms & definition of tr VC (100%) = 700 V VC (100%) = 700 V IC (100%) = 16 A IC (100%) = 16 A tf = 0,005 ?s tr = 0,007 ?s Switching Definitions Booster Configuration General conditions = = = IC 1% VCE 90% VGE 90% -25 0 25 50 75 100 125 -0,07 -0,04 -0,01 0,02 0,05 0,08 0,11 0,14 time (us) % tdoff tEoff VCE IC VGE IC 10% VGE 10% tdon VCE 3% -50 0 50 100 150 200 2,95 2,98 3,01 3,04 3,07 3,1 time(us) % IC VCE tEon VGE fitted IC10% IC 90% IC 60% IC 40% -25 0 25 50 75 100 125 0,06 0,07 0,08 0,09 0,1 0,11 time (us) % VCE IC tf IC 10% IC 90% -25 0 25 50 75 100 125 150 175 2,99 3 3,01 3,02 3,03 3,04 3,05 time(us) % VCE IC tr copyright Vincotech f20;BACKGROUND-COLOR:#4ae2f7">28 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of tEoff Turn-on Switching Waveforms & definition of tEon Poff (100%) = 11,23 kW Pon (100%) = 11,23 kW Eoff (100%) = 0,18 mJ Eon (100%) = 0,24 mJ tEoff = 0,136 ?s tEon = 0,067 ?s Figure 7 D1, D2, D3, D4, D5, D6 FWD Turn-off Switching Waveforms & definition of trr Vd (100%) = 700 V Id (100%) = 16 A IRRM (100%) = -10 A trr = 0,010 ?s Switching Definitions Booster Configuration IC 1% VGE 90% -25 0 25 50 75 100 125 -0,07 -0,04 -0,01 0,02 0,05 0,08 0,11 0,14 time (us) % Poff Eoff tEoff VCE 3% VGE 10% -25 0 25 50 75 100 125 150 2,98 3 3,02 3,04 3,06 3,08 3,1 time(us) % Pon Eon tEon IRRM 10% IRRM 90% IRRM 100% trr -75 -50 -25 0 25 50 75 100 125 3,01 3,018 3,026 3,034 3,042 3,05 time(us) % Id Vd fitted copyright Vincotech 29 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Figure 8 D1, D2, D3, D4, D5, D6 FWD Figure 9 D1, D2, D3, D4, D5, D6 FWD Turn-on Switching Waveforms & definition of tQrr Turn-on Switching Waveforms & definition of tErec (tQrr = integrating time for Qrr) (tErec= integrating time for Erec) Id (100%) = 16 A Prec (100%) = 11,23 kW Qrr (100%) = 0,11 ?C Erec (100%) = 0,04 mJ tQrr = 0,019 ?s tErec = 0,019 ?s Figure 10 Booster Configuration switching measurement circuit Measurement circuit Switching Definitions Booster Configuration tQrr -100 -50 0 50 100 150 200 3 3,01 3,02 3,03 3,04 3,05 3,06 time(us) % Id Qrr -100 -50 0 50 100 150 200 250 300 350 400 450 500 550 600 3 3,01 3,02 3,03 3,04 3,05 time(us) % Prec Erec tErec V Vce V Vge D1 D2 Q Q 0.00001 Q Q 0.000003 Q Q +16V 0V 4Ohm 4Ohm A Ic 700 VDC 705uH L T1 T2 V Vcc -8V copyright Vincotech 30 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y in DataMatrix as in packaging barcode as M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y Pin X Y 1 33,4 0 2 25,4 0 3 25,05 2,8 4 25,05 5,6 5 22,25 5,6 6 22,25 2,8 7 22,25 0 8 14,25 0 9 8 0 10 0 0 11 0 2,8 12 0 5,6 13 0 22,2 14 7,15 22,2 15 7,75 19,2 16 7,75 16,4 17 8,35 10,2 18 11,15 11,5 19 13,75 16,4 20 13,75 19,2 21 13,15 22,2 22 19,65 22,2 23 25,65 22,2 24 33,4 22,2 25 31,55 19,2 26 31,55 16,4 Pinout Ordering Code & Marking Ordering Code and Marking - Outline - Pinout Version w/o thermal paste 12mm housing Press-fit pin Pin table Outline Ordering Code 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y copyright Vincotech 31 Revision: 1 10-PZ126PA080MR-M909Ff20;BACKGROUND-COLOR:#4ae2f7">28Y DISCLAIMER LIFE SUPPORT POLICY As used herein: Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. copyright Vincotech 32 Revision: 1