(1) J. Vac. Sci. Technol. B 18.5., Sep/Oct 2000, p.2523 Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage Xinqiang Wang,a) Guotong Du, Zhi Jin, Mingtao Li, Jingzhi Yin, Zhengting Li, Shiyong Liu, and Shuren Yang Department of Electronic Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University region, Jilin University, Changchun 130023, People’s Republic of China (2)Optical Materials 14 (2000) p.211-215 Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE Zhi Jin a),*, Shuren Yang a), Bingbing Liu b), Mingtao Li a), Xinqiang Wang a), Zhengting Li a), Guotong Du a), Shiyong Liu a) a) Department of Electronic Engineering, State Key Lab on Integrated Optoelectronics, Jilin University, Changchun 130023, People's Republic of China b) State Key Laboratory of Superhard Material, Jilin University, Changchun 130023, People's Republic of China (3)光电子与激光　第11卷　第1期 2000年2月 p.29 InP衬底GaAs张应变层上InAs量子点的原子力显微镜分析 金智, 李明涛, 王新强, 李正庭, 杨树人, 杜国同, 刘式墉 集成光电子学国家重点实验室吉林大学实验区, 吉林大学电子工程系, 长春130023 (4) 在IEEE Lasers and Electro-Optics Scociety 1999 Annual Meeting上宣讲的论文摘要： Influence of the Amount of InAs on InAs Quantum Dots on Thin GaAs Tensile-strained Layer on (001) InP Substrate Guotong Du, Xinqiang Wang, Mingtao Li, Zhi Jin, Jingzhi Yin, Zhengting Li, Shiyong Liu, Shuren Yang Jilin University, Changchun, China (XYS20040517) ◇◇新语丝(www.xys.org)(xys.dxiong.com)(xys.3322.org)(xys.freedns.us)◇◇

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