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Chapter 2: MAX II Architecture Functional Description
Figure 2–1 shows a functional block diagram of the MAX II device.
Figure 2–1. MAX II Device Block Diagram
IOE IOE IOE IOE IOE IOE
IOE
Logic Element
Logic Element
Logic Element
IOE
Logic Element
Logic Element
Logic Element
Logic Array BLock (LAB)
MultiTrack Interconnect IOE Logic Element Logic Element Logic Element
IOE
Logic Element
Logic Element
Logic Element
MultiTrack Interconnect
Each MAX II device contains a flash memory block within its floorplan. On the EPM240 device, this block is located on the left side of the device. On the EPM570, EPM1270, and EPM2210 devices, the flash memory block is located on the bottom-left area of the device. The majority of this flash memory storage is partitioned as the dedicated configuration flash memory (CFM) block. The CFM block provides the nonvolatile storage for all of the SRAM configuration information. The CFM automatically downloads and configures the logic and I/O at power-up, providing instant-on operation. f For more information about configuration upon power-up, refer to the Hot Socketing and Power-On Reset in MAX II Devices chapter in the MAX II Device Handbook. A portion of the flash memory within the MAX II device is partitioned into a small block for user data. This user flash memory (UFM) block provides 8,192 bits of general-purpose user storage. The UFM provides programmable port connections to the logic array for reading and writing. There are three LAB rows adjacent to this block, with column numbers varying by device. Table 2–1 shows the number of LAB rows and columns in each device, as well as the number of LAB rows and columns adjacent to the flash memory area in the EPM570, EPM1270, and EPM2210 devices. The long LAB rows are full LAB rows that extend from one side of row I/O blocks to the other. The short LAB rows are adjacent to the UFM block; their length is shown as width in LAB columns.

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