From Michael S. Shur, Robert Davis, and Harry Dietrich, Editors GaN-based Devices: Material Growth, Characterization, Device Performance (Tentative Title). World Scientific, Inc. Book Series on "Special Topics in Electronics and Systems," to be published
GALLIUM NITRIDE ( GaN )
Crystal structure Group of symmetry
Wurtzite C6v P63mc
4
Zinc Blende
_ 2 Td F 43m 6.15[17,45]
Density (g/cm3) Dielectric constant static high frequency Electron affinity (eV) Lattice constants ( A ) Optical phonon energy (meV)
o
8.9-9.5[45,72,75,98] 5.35[38,45,72,75,98] 4.1[86]; 3.4[57] a = 3.189[106] c = 5.185[45,106] 91.8[22,45] 3.5[106] 3.57-7.4×10-4 ×T2/(T+600)
9.7 5.3[38] 4.52[45]-4.50[75,106] 91.9[45] 3.3[106] 3.37-7.4×10-4 ×T2/(T+600)
Band structure
Energy gap (eV) Temperature dependence of the energy gap 0
Effective electron mass (in units of m0) 0.22[77,106,108] 2.6×1018 0.15[32] 1.4×1018 Effective conduction band density of states (cm-3)
2
Ionization energies of shallow donors [40,76,115] Si (eV)
0.012-0.03 0.004-0.01 0.011-0.018[97,106] 0.011-0.022[97,106] 1.0[106] 2.5×1019 1.3[32,63] 4.1×1019 0.017106]
O (eV)
Valence band
Energy of spin-orbital splitting E so (eV) Energy of crystal-field splitting Ecr (eV) Effective hole mass heavy Effective valence band density of states (cm-3) (For more details of the band structure see [106,116] and references there in)
Ionization energies of shallow acceptors [2,40,98]
(in units of m0)
Mg (eV) Zn (eV) Native defect VGa (eV)
0.14-0.21 0.21 0.14
Electrical properties
Breakdown field (Vcm-1) 2 Mobility (cm V-1s-1) Electrons (for temperature and concentration dependencies see also [17,36,55]) Holes Diffusion coefficient(cm2s-1) Electrons holes Electron saturation velocity (10 cm s )